| Resumen |
MEMS structures with a capacitive interface are widely used due to its versatility for both detection and actuation operations while the galvanic isolation it provides improves high impedance inputs for posterior signal coupling [1]. However, capacitive structures impose challenges for the electronic conditioning system due to very small capacitive changes (~1-10 fF), parasitic capacitance cross-coupling and undesired charge injection effects. It is known that the performance and viability of MEMS sensors is often largely dictated by its electronic interface, therefore, the interfacing challenges must be addressed by selecting an appropriate design tradeoff in the signal conditioning circuit to ensure the fabrication of a suitable MEMS sensor. |
